Plasma Enhanced Deposited, Fully Oxidized PSG Film

ABSTRACT

A method of forming a plasma enhanced deposited oxide film on a substrate includes introducing into a chamber containing the substrate silane gas and a dopant gas such as phosphine. The chamber is pressurized and energy is applied to create a plasma. The energy may be a dual frequency energy. The gas rates and pressure are selected to produce a plasma enhanced deposited oxide film on a substrate having a Si—O—Si bond peak absorbance in the IR spectrum of at least 1092 cm −1 .

CROSS-REFERENCE

This application claims the benefit of U.S. patent application Ser. No.10/953,573 filed Sep. 30, 2004 and Provisional Patent Application Ser.No. 60/583,844 filed on Jun. 30, 2004, which are incorporated herein byreference.

BACKGROUND AND SUMMARY OF THE DISCLOSURE

The present disclosure relates generally to an integrated circuit havingoxide films and, more specifically, to a plasma enhanced deposited oxidefilm.

One method of deposition is chemical vapor deposition (CVD), whichincludes plasma enhanced chemical vapor deposition (PECVD). The othermethod is thermal oxidation (TO). Various devices in an integratedcircuit may be affected by the charge retention in the oxide film.Specifically, in metal oxide silicon transistors, once the biasing ofthe device is removed, the oxide may retain various levels of charge.This would affect the turn off and/or reactivation of the device.Historically, CVD oxide films have retained more charge than thermaloxidized films because the film includes dangling atoms, which are notfully bonded to each other (namely, incomplete reacted species).

This problem is addressed in the article “Development of a FullyOxidized PECVD PSG Film,” Semiconductor International, p. 105 (August2000). The suggested solution is to increase the N₂O:SiH₄ ratio andprocess pressure and using only high frequency RF power. The Si—O—Sibond peak wavelength in the infrared (IR) spectrum was 1091 cm⁻¹ for theCVD oxide film compared to 1095 cm⁻¹ for the TO oxide film.

The present disclosure has found that a modification of the PECVDprocess has substantially decreased the charge retention of the oxideand has improved the Si—O—Si bonding within the oxide so as to be morefully oxidized. This more fully oxidized bonding is reflected by anincrease in the Si—O—Si bond peak wavelength in the IR spectrum. It isalso capable of increased levels of doping, which have improved re-flowcharacteristics, as well as other characteristics.

The present method of forming a plasma enhanced deposited oxide film ona substrate includes introducing into a chamber containing the substratesilane gas and a dopant gas such as phosphine. The chamber ispressurized and energy is applied to create a plasma. The energy may bea dual frequency energy. The gas rates and pressure are selected toproduce a plasma enhanced deposited oxide film on a substrate having aSi—O≦Si bond peak absorbance in the IR spectrum of at least 1092 cm⁻¹.The oxide film uniformity has a standard deviation of 0.7% maximum.

These and other aspects of the present disclosure will become apparentfrom the following detailed description of the disclosure, whenconsidered in conjunction with accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram of an apparatus for carrying out the present methodand the resulting integrated circuit.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

A device or chamber 10 has multiple gas inlets 12 and 14. The plasmaenhancement elements or energy source are schematically shown at 16. Thechamber and the process is conducted to produce an oxide film 22 on asubstrate 20.

An example of the system 10 may be a Novellus Concept 1 PECVD device.Since the device is well known, all other elements have been excluded,including the details of the plasma enhancing portion 16.

The following Table 1 shows the parameters of the current recipe andthree examples of the new recipe wherein the flow rate of 9,500 sccm forN₂O and 4,000 sccm for N₂ are the same for all recipes: TABLE 1 PREVIOUSCURRENT NEW NEW NEW PARAMETER RECIPE RECIPE RECIPE A RECIPE B RECIPE CSilane Flow 200 sccm 180 sccm 200 sccm 180 sccm 180 sccm Phosphine Flow540 sccm 540 sccm 670 sccm 650 sccm 680 sccm HF Power 40% 40% 60% 60%60% LF Power 60% 60% 40% 40% 40% Pressure 2.6 T 2.6 T 3 T 2.8 T 2.8 TPeak Wavelength ˜1086 cm⁻¹ ˜1089 cm⁻¹ ˜1092 cm⁻¹ 1096.4 cm⁻¹ 1092.3 cm⁻¹

A review of Table 1 will indicate that decreasing the silane flow ormaintaining the same while substantially increasing the dopant orphosphine flow and increasing the pressure is provided by the presentmethod. This causes an increase in the Si—O—Si bond peak wavelength inthe IR spectrum, which is reflective of more complete and fully oxidizedbonding within the silicon oxide film. The phosphorous content in theoxide may be in the range of 6% to 8%. This is an example for a siliconoxide formed on a silicon substrate. The more fully oxidized andcompletely reacted Si—O—Si bonding reduces the charge retention of thesilicon oxide. This leads to improved performance of the integratedcircuit devices. The resulting standard deviation of film uniformity ofthe oxide is generally in the range of 0.4% to 0.7%.

The dual frequency percentages have been changed with an increase of thepercentage of high frequency power compared to low frequency power. Thedual frequency also makes the film compressive. The deposition may beperformed without the dual frequency if the compressive characteristicsare not desired. The film of the present disclosure more closelyresembles that of a thermal oxide film.

A detailed explanation of all of the gas flows for one example may be asfollows: The silane flow is 180 sccm, 650 sccm for 3% phosphine, 9,500sccm for N₂O and 4,000 sccm for N₂. The pressure was 2.8 torrs. Thedeposition occurs at temperatures of 400° C.

The increase of the Si—O—Si peak wavelength to 1096 cm⁻¹ is substantialsince 1096 cm⁻¹ is the highest thermal oxide peak absorbance. Theincrease in the Si—O—Si peak wavelength indicates nearly completeoxidation of the Si—O—Si bonding in the current PECVD film. In general,PECVD films have not even been able to reach this value, due toincomplete reaction of the reactant gases. As previously discussed, thestandard deviation of film uniformity of the oxide in the experimentshave been between 0.4% and 0.7%. It should also be noted that the stressof the film is compressive at −1.44E8 dyne/cm². The deposition rate wasnot compromised in the present process and remains at about 3,800angstroms per minute.

Although the present disclosure has been described and illustrated indetail, it is to be clearly understood that this is done by way ofillustration and example only and is not to be taken by way oflimitation. The scope of the present disclosure is to be limited only bythe terms of the appended claims.

1. An integrated circuit comprising: a substrate; a plasma enhanceddeposited silicon oxide film on the substrate; and the silicon oxidefilm having a peak absorbance in the IR spectrum of at least 1092 cm⁻¹.2. The integrated circuit of claim 1, wherein the silicon oxide filmuniformity has a standard deviation of 0.7% maximum.
 3. The integratedcircuit of claim 2, wherein the silicon oxide film has a phosphoruscontent in the range of 6% to 8%.
 4. The integrated circuit of claim 1,wherein the silicon oxide film has a phosphorus content in the range of6% to 8%.